GeneSiC New GB100XCP12-227 IGBT/Sic Diode Moule Co-Pack

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation.
GeneSiC Semiconductor release new second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs.
SiC Schottky/Si IGBT mini-modules (Co-packs) offered by GeneSiC are made with Si IGBTs that exhibit positive temperature coefficient of on-state drop, robust punchthrough design, high temperature operation and fast switching characteristics that are capable of being driven by commercial, commonly available 15 V IGBT gate drivers. The SiC rectifiers used in these Co-pack modules allow extremely low inductance packages, low on-state voltage drop and no reverse recovery. The SOT-227 package offers isolated baseplate, 12mm low profile design that can be used very flexibly as a standalone circuit element, high current paralleled configuration, a Phase Leg (two modules), or as a chopper circuit element.

Datasheet: https://www.genesicsemi.com/images/products_sic/igbt_copack/GB100XCP12-227.pdf

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