New Silicons and Electronics

Toshiba  has launched eight 30 V/40 V Schottky Barrier Diodes (SBD): “CUHSxxF40”, “CUHSxxF30”, “CUHSxxS40” and “CUHSxxS30” which are suitable for voltage boosting circuits to drive LCD backlights of mobile devices such as smartphones, tablets and laptop PCs, expanding the lineup CUHS20F40 Schottky Barrier Diode 40V 2A Low forward voltage CUHS15F40 Schottky Barrier Diode 40V 1.5A Low forward voltage CUHS20F30 Schottky Barrier Diode 30V 2A Low forward voltage CUHS15F30 Schottky Barrier Diode 30V 1.5A Low forward voltage CUHS20S40 Schottky Barrier Diode 40V 2A Ultra-low forward voltage CUHS15S40 Schottky Barrier Diode 40V 1.5A Ultra-low forward voltage CUHS20S30 Schottky Barrier Diode 30V 2A Ultra-low forward voltage CUHS15S30 Schottky Barrier Diode 30V 1.5A Ultra-low forward voltage https://toshiba.semicon-storage.com/ap-en/company/news/new-products-share/diode/diode-201907...

Vishay introduced six new FRED Pt® Gen 5 1200 V Hyperfast and Ultrafast rectifiers. Offering the best conduction and switching loss trade-off for devices in their class, the 30 A and 60 A Vishay rectifiers are designed to increase the efficiency of high frequency converters, and hard- and soft-switched or resonant designs. Device V R  (V) I F(AV)  (A) Package VS-E5PX3012L-N3 1200 30 TO-247AD 2L VS-E5TX3012-N3 1200 30 TO-220AC 2L VS-E5PH3012L-N3 1200 30 TO-247AD 2L VS-E5TH3012-N3 1200 30 TO-220AC 2L VS-E5PX6012L-N3 1200 60 TO-247AD 2L VS-E5PH6012L-N3 1200 60 TO-247AD 2L Datasheet: VS-E5PX3012L-N3  https://www.vishay.com/docs/96442/vs-e5px3012l-n3.pdf Datasheet: VS-E5TX3012-N3  https://www.vishay.com/docs/96507/vs-e5tx3012-n3.pdf Datasheet: VS-E5PH3012L-N3  https://www.vishay.com/docs/96501/vs-e5ph3012l-n3.pdf Datasheet: VS-E5TH3012-N3...

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation. GeneSiC Semiconductor release new second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs. SiC Schottky/Si IGBT mini-modules (Co-packs) offered by GeneSiC are made with Si IGBTs that exhibit positive temperature coefficient of on-state drop, robust punchthrough design, high temperature operation and fast switching characteristics that are capable of being driven by commercial, commonly available 15 V IGBT gate drivers. The SiC rectifiers used in these Co-pack modules allow extremely low inductance packages, low on-state voltage drop and no reverse recovery. The SOT-227 package offers isolated baseplate, 12mm low profile design that can be used very flexibly as a standalone circuit element, high current paralleled configuration, a Phase Leg (two modules), or as a chopper circuit element. Datasheet: https://www.genesicsemi.com/images/products_si...

Toshiba has launched a general rectifier diode "CRG04A" that is suitable for reverse polarity and reverse current protection in automotive ECUs  ( Electronic Control Unit ). The new product CRG04A features a maximum repetitive peak reverse current of 5 μA   by optimizing the chip structure, a 50 % reduction from the conventional product CRG04. This helps to reduce the power consumption of devices. Furthermore, realizing the average ESD protection at 25 kV   raises ESD protection when the connector is inserted and removed, contributing toward improving the reliability of devices. In addition, by using the highly versatile S-FLAT™ package, this product can replace conventional products. ESD protection ability: ESD=25 kV (typ.) Low repetitive peak reverse current: I RRM =5 µA (max) @V RRM =600 V Repetitive peak reverse voltage: V RRM =600 V Datasheet https://toshiba.semicon-storage.com/info/docget.jsp?did=65050&prodName=CRG04A https://toshiba.semicon-st...